Memory for programming a floating gate using an analog comparison device coupled to a tunneling device

ABSTRACT

The present invention provides circuits, systems, and methods for programming a floating gate. As described herein, a floating gate tunneling device is used with an analog comparison device in a circuit having a floating reference node and an offset-mitigating feedback loop for iteratively programming a floating gate or multiple floating gates.

PRIORITY ENTITLEMENT

This application is a continuation application of application Ser. No.13/327,364 filed Dec. 15, 2011, which is a divisional application ofapplication Ser. No. 12/363,232 filed Jan. 30, 2009, now U.S. Pat. No.7,859,911, which claims priority to Provisional Patent Application Ser.No. 61/082,403 filed on Jul. 21, 2008, all of which are incorporatedherein by reference in their entireties. This application and the parentapplications have at least one common inventor.

TECHNICAL FIELD

The invention relates to low-current analog integrated circuitry. Moreparticularly, the invention relates to microelectronic floating gatecircuit architectures, systems, and methods for their programming andoperation.

BACKGROUND OF THE INVENTION

Programmable analog circuits are often required in applications wherevoltage accuracy and low power use are desirable traits.

Band gap reference voltage circuits are frequently used in applicationsthat require a high degree of voltage accuracy. Band gap voltagereference circuits are known for their capabilities for providingexcellent accuracy and stability over time and a range of operatingtemperatures. Unfortunately, however, band gap references are limited toa fixed voltage level, typically about 1.2V. The additional circuitryrequired for providing other voltage levels, such as fixed gainamplifiers for example, can be seriously detrimental to accuracy.Additionally, band gap voltage reference circuits generally draw asignificant amount of power, presenting an additional problem inapplications in which low power consumption is desirable.

Floating gate voltage reference circuits are often chosen for their lowpower requirements, but can be problematic in applications requiring ahigh degree of accuracy in providing a selected programmed voltagelevel, particularly over time and changes in temperature. A floatinggate may be conceptualized as a charge oasis of conductive materialelectrically isolated from the outside world by a semiconductorsubstrate desert. The floating gate is capacitively coupled to thesubstrate or to other conductive layers. The floating gate is usuallyused to provide bias to the gate of a transistor and is readable withoutcausing a significant leakage of charge. In theory, a floating gateprogrammed at a particular charge level remains at that levelpermanently, since the floating gate is insulated by the surroundingmaterial. The floating gate is commonly charged using Fowler-Nordheimtunneling, or Channel Hot Carrier (CHC) tunneling, practices generallyknown to practitioners of the microelectronic arts. The accuracy ofcommon floating gate circuits is limited for at least two primaryreasons. Firstly, the potential on a floating gate decreases after it isprogrammed due to the capacitance inherent in the tunneling device. Thisvoltage offset is well-defined and predictable, but is unavoidable inprior art floating gate voltage reference circuits because thecapacitance of the tunneling device cannot be completely eliminated.Secondly, the accuracy of prior art floating gate voltage referencecircuits is also hampered by the decay of the theoretically permanentcharge on the floating gate over time. The decay of the charge over timeoccurs due to various factors, including the gradual escape of electronsfrom the tunneling device, and dielectric relaxation of the floatinggate capacitors. The decay of charge is not entirely predictable sinceit can be influenced by environmental factors such as mechanical andthermal stress effects or other variables.

Due to these and other problems and potential problems, improvedfloating gate reference and feedback circuits would be useful andadvantageous in the arts. Floating gate circuit architecture andassociated methods adapted to rapid and accurate offset compensationwould be particularly beneficial contributions to the art.

SUMMARY OF THE INVENTION

In carrying out the principles of the present invention, in accordancewith preferred embodiments, the invention provides advances in the artswith novel methods directed to providing low-current floating gatearchitectures with offset mitigation capabilities and improved accuracy.

According to aspects of the invention, preferred embodiments of floatinggate circuit methods use an iterative floating gate device and floatingreference node programming technique for improved accuracy andstability.

According to one aspect of the invention, a preferred embodimentincludes method steps for programming a floating gate circuit using atunneling device and a floating reference node for iterativelyprogramming an output with an offset-mitigating feedback loop.

According to another aspect of the invention, a preferred embodimentthereof includes the step of operating a suitably equipped circuit in atunneling mode whereby charge is added to a tunneling device andconducted to a first op amp input such that the first op amp inputvoltage becomes equal with a second op amp input reference voltage. In afurther step the op amp inputs are reversed for operating the op amp ina unity gain mode such that the output of the circuit is substantiallyequal to the reference voltage.

According to another aspect of the invention, a preferred embodimentthereof includes using the steps for programming a plurality of floatinggates.

According to yet another aspect of the invention, a preferred embodimentincludes the steps of monitoring the output of the circuit, and based ona comparison of the circuit output with a preselected tolerancethreshold, selectably reiterating the tunneling mode step and the unitygain mode step using an incrementally changed reference voltage.

The invention has advantages including but not limited to providing oneor more of the following features; improved accuracy, rapid programming,improved stability over a range of operating conditions, and efficient,ultra-low power requirements. These and other advantageous features andbenefits of the present invention can be understood by one of ordinaryskill in the arts upon careful consideration of the detailed descriptionof representative embodiments of the invention in connection with theaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention will be more clearly understood from considerationof the following detailed description and drawings in which:

FIG. 1 is a simplified schematic diagram depicting an example of acircuit useful for implementing the methods of the invention;

FIG. 2 is schematic diagram of a preferred alternative embodiment of acircuit useful for implementing the invention;

FIG. 3 depicts wave form examples illustrating the operation of theembodiments of the invention introduced with reference to FIGS. 1 and 2;and

FIG. 4 is a process flow diagram showing an alternative view of anexample of steps in preferred methods of the invention;

FIG. 5 is schematic diagram of a preferred alternative embodiment of amultiple floating gate programming circuit useful for implementing theinvention; and

FIG. 6 is schematic diagram of an example of an alternative embodimentof a floating gate programming circuit useful for implementing theinvention.

References in the detailed description correspond to like references inthe various drawings unless otherwise noted. Descriptive and directionalterms used in the written description such as front, back, top, bottom,upper, side, et cetera, refer to the drawings themselves as laid out onthe paper and not to physical limitations of the invention unlessspecifically noted. The drawings are not to scale, and some features ofembodiments shown and discussed are simplified or amplified forillustrating principles and features, as well as anticipated andunanticipated advantages of the invention.

DESCRIPTION OF PREFERRED EMBODIMENTS

While the making and using of various exemplary embodiments of theinvention are discussed herein, it should be appreciated that thepresent invention provides inventive concepts which can be embodied in awide variety of specific contexts. It should be understood that theinvention may be practiced with various electronic circuits,microelectronic circuit components, systems, system components, andsubsystems without altering the principles of the invention. Forpurposes of clarity, detailed descriptions of functions, components, andsystems familiar to those skilled in the applicable arts are notincluded. In general, the invention provides programmable analog voltagereference circuits for rapidly and accurately setting an output to agiven selected voltage.

Now referring primarily to FIG. 1, the structure of an example of anembodiment of a programmable floating gate circuit 10 is shown in asimplified schematic, and its operation is described. An op amp 12 and avoltage level shifting device 15 are interconnected in a configurationin which a first switch SW1 controls the output of the voltage levelshifting device 15 to a tunneling device T1. A second switch SW2selectably connects the tunneling device T1 to ground. A third switchSW3 selectably completes a feedback loop 13 from the op amp outputAMPOUTPUT to a second op amp input 12B. A fourth switch SW4 selectablyconnects a reference voltage VREF to the second op amp input 12B aswell. Note that the op amp output AMPOUTPUT is also preferably coupledto the input of the voltage level shifting device 15. The first op ampinput 12A is connected at a junction referred to herein as a floatingreference node 20, denoting the connection among the op amp 12, thetunneling device T1, and ground. The capacitance of the configuration isrepresented by C0 between the reference node 20 and ground. A reverseinput 12C to the op amp 12 is provided for selectably reversing thepolarity of the op amp, 12.

The circuit arrangement shown in FIG. 1, and its functional equivalents,facilitates operation in two modes, tunneling mode, and unity gain mode,in the following manner. Assume for the sake of illustration that thepotential of the floating reference node 20 is initially at zero volts.Further assume for the sake of illustration that the switches shown inFIG. 1 are in the following initial states: SW1 closed; SW2 open; SW3open; SW4 closed. It can be seen that a path is provided from thevoltage level shifting device 15, through SW1, to a floating gate attunneling device T1. Accordingly, during programming the voltage at thetunneling device T1 is raised to a level sufficient for Fowler-Nordheimtunneling to occur. As a result, voltage increases at the floatingreference node 20, initially causing the voltage at the first op ampinput 12A to rise. The closed state of SW4 also applies referencevoltage VREF to the second input 12B of the op amp 12. Gradually, thevoltage at the floating reference node 20 becomes equal to VREF, theequal voltage at the op amp inputs 12A and 12B causes the op amp outputAMPOUTPUT to decrease, in turn diminishing the input to the voltagelevel shifting device 15, which causes a corresponding drop in thevoltage at the tunneling device T1, halting the Fowler-Nordheimtunneling. The first and fourth switches SW1, SW4, then open, andswitches two and three, SW2, SW3, close, placing feedback 13 on thesecond op amp input 12B, while the selectable application of voltage atthe reverse op amp input 12C is preferably used to reverse the first 12Aand second 12B inputs in order to cause the op amp 12 to operate as aunity gain voltage buffer. Thus, it can be seen that the circuit 10 hastwo operating states. A tunneling mode is used for adding charge to thetunneling device in order to bring the floating gate to a voltage levelequal to, or nearly equal to, the floating reference voltage. A buffermode is used to operate the op amp as a unity gain buffer maintainingthe selected voltage level.

The AMPOUTPUT voltage is preferably monitored using suitable techniquesknown in the arts, and in the event a selected voltage level is notpresent within in acceptable tolerances, e.g., the AMPOUTPUT voltage istoo low due to non-ideal behavior of the circuit, the process describedabove may be reiterated with the modification that the reference voltageVREF may be increased, which in turn results in an increased voltage atthe floating reference node 20, and ultimately increased voltage atAMPOUTPUT. Using the circuits and techniques of the invention, theAMPOUTPUT voltage can be rapidly adjusted to approach a selected valuewithin precise tolerances by using successive iterations of the stepsshown and described. The programmed floating gate may be erased to resetthe circuit by raising the voltage at C0, energizing the trappedelectrons in the floating gate to an energy level sufficient to enablethem to escape.

Various implementations of the invention are possible, and allvariations of potential embodiments cannot, and need not, be shownherein. Although specific exemplary embodiments using representativecomponent parts are shown for the purposes of illustration, someelements of the circuit may be substituted without undue experimentationby those skilled in the arts. For instance, analog comparison devicessuch as analog to digital converter (ADC) devices or comparators may beused in place of op amps, level shifter topology may be implemented invarious ways, and suitable modifications may be made to adapt thecircuit for current, power, transconductance, or other inputs and/oroutputs. The invention may be used, for example, in power systems,energy systems, portable electronics, battery and power supplymanagement systems, and the like. An example of a preferred embodimentis shown in FIG. 2, providing a more detailed view of an implementationof the conceptual circuit 10 introduced in FIG. 1. A control signal P1is generated by a suitable voltage source (not shown) for controllingtransistors M0 and M2. Control signal P2 is generated by a voltagesource VOLTAGE1 for controlling transistor M1. A voltage level shiftingcircuit 15 is implemented by the charge pump configuration formed bytransistors M0, M1 and M2. The voltage level shifting circuit 15produces sufficient voltage to induce Fowler-Nordheim tunneling attunneling device T1, placing a charge on the floating gate of thetunneling device T1. The tunneling device T1 is connected to the firstinput 12A of the op amp 12. The second op amp input 12B is connecteddirectly to a reference voltage source VREF through transistor M7,controlled by a reference voltage control. A “DONE” signal may beasserted following the completion of a programming iteration using asuitable voltage source. Upon triggering by the DONE signal, thetransistor M3 selectably couples the tunneling device T1 to ground, asignal at reverse input 12C reverses op amp 12 polarity, and thefeedback transistor M3 places the op amp 12 in negative feedback mode,operating as a unity gain voltage buffer. The accompanying timingdiagram at the bottom of FIG. 2 illustrates the operation of the exampleof the embodiment of the circuit 10. As shown, when P1 is on, andtunneling at the tunneling device T1 is caused to occur, P2 is off, andvice versa, when p1 is switched off, P2 is switched on with the resultthat the DONE signal is activated, causing the op amp 12 to operate inunity gain mode.

The steps described may be reiterated one or more times as needed inorder to approach the desired voltage level within a selected degree ofaccuracy, although it is believed that in general few iterations arerequired for most applications. It should be understood by those skilledin the arts that the circuit and components shown are representative ofone example of an embodiment of the circuitry and methods of theinvention for illustrative purposes and are not exclusive, restrictive,or limiting, as to the potential implementations and uses of theinvention. For example, those skilled in the arts will appreciate thatthe floating gate circuit architecture and offset cancellation methodsmay be used in a wide variety of contexts for managing offsets ofelectronic signals such as voltage, current, impedance, and the like.

FIG. 3 illustrates an example of the use of preferred embodiments of theapparatus and method of the invention as shown in and described withrespect to FIG. 1 and FIG. 2. Voltage waveforms are shown for voltagesmeasured at AMPOUTPUT, FLOATINGREF (from floating node 20), and VREF,plotted during the course of operation of the circuit 10. The time spanshown is divided into five segments for reference purposes. Referring tosegment numeral 1, it can be seen that VREF is initially 1.4V, arepresentative preselected value arbitrarily chosen for illustrationpurposes. It should be appreciated by those skilled in the arts thatvoltage levels shown and described are not restrictive, but areillustrative of typical voltages levels with which the invention may beused within the context of the microelectronics arts. The FLOATINGREFvoltage can be seen to increase during segment 1 from an initial valuenear zero Volts to 1.4V at segment 2. The output voltage AMPOUTPUT drops(segment 1) from an initial value of about 5V, to about 4V when thefloating reference voltage FLOATINGREF reaches a level equal to thereference voltage VREF, shown at reference numeral 2. As shown wheresegment 2 meets segment 3, when tunneling is stopped, the outputAMPOUTPUT operates in unity gain mode, but due to non-ideal operation ofthe circuitry, e.g., capacitive coupling C0 at the tunneling device T1(FIGS. 1 and 2), and possibly also due to switching inefficiencies,outputs 1.3V instead of the selected target voltage of 1.4V. Referringagain to the trace for VREF, at segment 4, the reference voltage isincreased by 100 mV to compensate for the non-idealities of the circuit,and the steps are reiterated, in turn increasing FLOATINGREF to 1.5V,resulting in the output AMPOUTPUT shown at segment 5, of 1.4V, and thecircuit 10 is permitted to remain in unity gain mode. It should beunderstood that the values shown in this example are provided as anillustration of the operation of a preferred embodiment of the inventionand are not exclusive or limiting. The invention may be practiced usinga wide range of values as appropriate in a broad range of applicationsand contexts.

An alternative depiction of steps in methods of programming circuitsusing floating gate devices according to the invention is shown in FIG.4. Shown in box 40, in an initial state, the tunneling device isdisconnected from ground, and the amplifier feedback is disconnected 42.Applying voltage from the amplifier output and voltage shifting deviceto the tunneling device 44, and a reference voltage to the amplifierreference input 46, tunneling is induced 48. Tunneling permits thevoltage at the floating reference input terminal of the op amp toincrease to the point where the output voltage of the op amp decreasesuntil tunneling stops 48. The polarity of the op amp is then reversed,placing the op amp in unity gain mode 50. As shown at decision diamond54, a determination is made of whether the output level is withinacceptable tolerances. If the op amp output voltage is acceptable, thetunneling device is left tied to ground and the op amp remains in unitygain mode 56. If an acceptable voltage level has not been reached, theprocess is reiterated, returning to step 40 after an adjustment is madeto the reference voltage 52.

FIG. 5 is schematic diagram of an alternative embodiment of a multiplefloating gate programming circuit. It can be seen that the exemplarycircuit 10 of FIG. 5 resembles that of FIG. 2 in that in a similararrangement, a level shifter 15 is used to place charge on the floatinggate of tunneling device T1. Tunneling device T1 is coupled to the firstinput 12A of the op amp 12. In this example, a second tunneling deviceT2 is also shown connected between the reference voltage VREF, thesecond op amp input 12B, and ground. As the first voltage at the firstinput 12A rises due to the tunneling occurring at the first tunnelingdevice T1, the voltage reference VREF applied at the second input 12B isalso applied to the gate of the second tunneling device T2. As thevoltages at the floating reference node 20 and the reference VREFequalize, the tunneling ceases. The application of a signal “DONE” atthe reverse op amp input 12C is used to reverse the op amp polarity,placing it in a unity gain mode of operation.

An alternative approach to programming a floating gate for practicingthe invention is shown in FIG. 6. In this schematic diagram of anexample of an alternative embodiment of a floating gate programmingcircuit, Channel-Hot-Carrier (CHC) programming is used to program thefloating gate 62 at transistor device M66. Initially, with switches SW6and SW7 closed and SW8 tied to VSUPPLY, the amplifier/comparator 64 isfunctioning in comparator mode. The floating reference node 62 is at ahigh voltage and the amp 64 comparator output is high, causing deviceM68 to turn on. The conduction through device M66 causeschannel-hot-carrier transfer of charge to occur, placing a charge on thefloating gate at node 62. When the voltage at node 62 goes lower thanthe reference voltage VREF, the comparator 64 output goes low, causingdevice M68 to turn off, in turn causing the CHC transfer of charge tonode 62 to cease. At this point, switch SW9 is closed, ensuring that M68remains off preventing further CHC at M66. Closing switch SW10 causesthe amplifier/comparator 64 to operate in unity gain amplifier mode. Thevalue at the floating node 62 is preferably monitored, whereby thereference voltage VREF may be incremented and the steps reiterated inorder to compensate for any errors introduced by non-deal circuitry,such as for example errors introduced by capacitive coupling due toswitching. In order to erase the charge stored on the floating gate 62,switches SW6, SW9, and SW11 are closed, and SW8 is tied to the drain ofdevice M66. The floating node 62 begins from low voltage, causing theoutput of the comparator to be low. The ERASE VOLTAGE coupled to M66through switches SW8 and SW11 is high, causing Fowler Nordheim tunnelingto occur at the floating gate device M66. As the voltage at the floatingnode 62 rises above the reference voltage VREF, the comparator output ishigh. At this point SW11 is preferably opened, causing tunneling in thefloating gate device M66 to come to a stop.

The methods and apparatus of the invention provide one or moreadvantages including but not limited to, speed, accuracy, offsetcompensation, and efficiency in programmable analog circuits. While theinvention has been described with reference to certain illustrativeembodiments, those described herein are not intended to be construed ina limiting sense. For example, variations or combinations of steps ormaterials in the embodiments shown and described may be used inparticular cases without departure from the invention. Variousmodifications and combinations of the illustrative embodiments as wellas other advantages and embodiments of the invention will be apparent topersons skilled in the arts upon reference to the drawings, description,and claims.

We claim:
 1. A circuit configured to place a selected charge on afloating gate of a tunneling device, said circuit comprising: an analogcomparison device operatively coupled to said tunneling device; areference node operatively coupled to said tunneling device; and afeedback loop configured to couple an output of said analog comparisondevice to an input of said analog comparison device.
 2. The circuitaccording to claim 1 further comprising a voltage level shifting deviceselectably coupled to said tunneling device, wherein said voltage levelshifting device is configured to receive input from said analogcomparison device.
 3. The circuit according to claim 1 wherein saidanalog comparison device has an input configured to receive a referencesignal.
 4. The circuit according to claim 3 wherein said selected chargeis provided by said reference signal.
 5. The circuit according to claim1 further comprising one or more additional tunneling devicesoperatively coupled to said analog comparison device.
 6. The circuitaccording to claim 1 further comprising at least one power supplyoperatively coupled to said analog comparison device and said tunnelingdevice.
 7. The circuit according to claim 1 wherein said analogcomparison device comprises an op amp.
 8. The circuit according to claim1 wherein said analog comparison device comprises a comparator.
 9. Thecircuit according to claim 1 wherein said analog comparison devicecomprises an analog to digital converter.
 10. The circuit according toclaim 1 wherein said tunneling device comprises a Fowler-Nordheimtunneling device.
 11. The circuit according to claim 1 wherein saidtunneling device comprises a Channel-Hot-Carrier tunneling device. 12.The circuit according to claim 1 further comprising electronic powersystem circuitry operatively coupled with said floating gate.
 13. Thecircuit according to claim 1 further comprising portable electronicsystem circuitry operatively coupled with said floating gate.
 14. Acircuit configured to place a selected charge on a floating gate of atunneling device, said circuit comprising: an analog comparison deviceoperatively coupled to said tunneling device, wherein said analogcomparison device has a first input configured to receive a referencesignal; a feedback loop configured to couple an output of said analogcomparison device to a second input of said analog comparison device; areference node operatively coupled to said tunneling device; and avoltage level shifting device selectably coupled to said tunnelingdevice.
 15. The circuit according to claim 14 wherein said selectedcharge is provided by said reference signal.
 16. The circuit accordingto claim 14 further comprising one or more additional tunneling devicesoperatively coupled to said analog comparison device.
 17. The circuitaccording to claim 14 wherein said analog comparison device comprises anop amp, a comparator, or an analog to digital converter.
 18. The circuitaccording to claim 14 wherein said tunneling device comprises aFowler-Nordheim tunneling device or a Channel-Hot-Carrier tunnelingdevice.
 19. A circuit for placing a selected charge on the floating gateof a tunneling device, comprising: an analog comparing device having afirst input operably coupled to the output of a tunneling device, theanalog comparing device also having a second input selectably coupled toa reference signal; a level shifting device selectably coupled to theinput of the tunneling device, the voltage level shifting device alsooperably coupled to receive input from an analog comparing deviceoutput; wherein the input of the tunneling device is selectably coupledto a reference node; and wherein a selected charge provided by thereference signal is placed on the floating gate of the tunneling device.20. A method for programming a floating gate circuit comprising thesteps of: using a level shifting device operably coupled to an analogcomparing device output, providing a voltage to a tunneling device, thevoltage of sufficient magnitude to induce tunneling in the tunnelingdevice, whereby a floating reference signal is conducted through thetunneling device, the floating reference signal in turn causing a firstinput signal at a first analog comparing device input to rise; providinga second input signal to a second input of the analog comparing deviceuntil the first and second input signals become equal, whereby theanalog comparing device output to the input of the level shifting devicedecreases, whereby the voltage at the tunneling device is changed to alevel insufficient to maintain tunneling in the tunneling device; andcausing the analog comparing device to reverse polarity, thereby placingthe analog comparing device in unity gain mode, whereby the analogcomparing device output, and thus the output of the floating gatecircuit, is programmed at the reference signal value.